參數(shù)資料
型號(hào): IBMN325164CT3
廠(chǎng)商: IBM Microeletronics
英文描述: 256Mb(16Mbit x 4 I/O x 4 Bank) Synchronous DRAM(256M位(16M位 x 4 I/O x 4 組)同步動(dòng)態(tài)RAM)
中文描述: 256Mb的(16兆× 4的I / O × 4行)同步DRAM(256M位(1,600位× 4的I / O × 4組)同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 42/66頁(yè)
文件大小: 1699K
代理商: IBMN325164CT3
I
I
I
2
P
U
P
0
1
A
\
CK
CKE
CS
DQ
RAS
CAS
WE
* BA1
DQM
T2
T3
T4
T0
T1
T6
T7
T8
T9
T5
T11
T12
T13
T14
T10
T16
T17
T18
T19
T15
T22
T20
T21
Hi-Z
A10
A0-A9,
A11,A12
t
CES
t
CS
t
CH
t
AS
t
RCD
t
DAL
t
DS
Activate
Command
Bank 0
Write with
Auto Precharge
Command
Bank 0
Activate
Command
Bank 1
Write with
Auto Precharge
Command
Bank 1
Activate
Command
Bank 0
Write
Command
Bank 0
Precharge
Command
Bank 0
Activate
Command
Bank 0
t
DH
Ax0
Ax3
Ax2
Ax1
Bx0
Bx3
Bx2
Bx1
Ay0
Ay3
Ay2
Ay1
t
CK2
t
CKH
t
CKL
Activate
Command
Bank 1
RAy
CBx
CAy
RAy
RBx
RBx
CAx
RBy
RBy
RAz
RAz
RAx
RAx
t
AH
*
BA0 = ”L”
Bank2,3 = Idle
t
RC
t
CEH
t
DPL
t
RP
t
RRD
t
DPL
and t
DAL
depend on clock cycle time and
speed sort. See the Clock Frequency and
Latency Table.
(Burst length = 4, CAS latency = 2)
相關(guān)PDF資料
PDF描述
IBMN612404GT3B 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動(dòng)態(tài)RAM(采用雙數(shù)據(jù)速率結(jié)構(gòu)))
IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動(dòng)態(tài)RAM(采用雙數(shù)據(jù)速率結(jié)構(gòu)))
IBMN625404GT3B 256Mb Double Data Rate Synchronous DRAM(256M位雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)
IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM(256M位雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)
ICM7321 SINGLE 12/10/8-BIT VOLTAGE-OUTPUT DACS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBMN364164CT3C360 制造商:IBM 功能描述:*
IBMPPC403GAJC33C1 制造商:IBM 功能描述:
IBMPPC750CLGEQ4023 制造商:IBM 功能描述:MPU 750CL RISC 32BIT 90NM 400MHZ 1.15V/1.8V 278FCBGA - Trays
IBMPPC750CLGEQ5023 制造商:IBM Microelectronics 功能描述:MPU 750CL RISC 32BIT 90NM 500MHZ 1.15V/1.8V 278FCBGA - Trays
IBMPPC750CLGEQA033 制造商:IBM 功能描述:MPU 750CL RISC 32BIT 90NM 1GHZ 1.15V/1.8V 278FCBGA - Trays 制造商:IBM 功能描述:IBMIBMPPC750CLGEQA033 CPU PPC 750CL 1GHZ