參數(shù)資料
型號: IBMN325164CT3
廠商: IBM Microeletronics
英文描述: 256Mb(16Mbit x 4 I/O x 4 Bank) Synchronous DRAM(256M位(16M位 x 4 I/O x 4 組)同步動態(tài)RAM)
中文描述: 256Mb的(16兆× 4的I / O × 4行)同步DRAM(256M位(1,600位× 4的I / O × 4組)同步動態(tài)RAM)的
文件頁數(shù): 65/66頁
文件大?。?/td> 1699K
代理商: IBMN325164CT3
IBMN325164CT3
IBMN325804CT3
IBMN325404CT3
Preliminary
256Mb Synchronous DRAM - Die Revision B
06K0608.F39375A
10/00
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 65 of 66
Revision Log
Rev Date
01/00
Contents of Modification
Initial release
1st Revision
Increased current limits for Icc2ns and Icc5.
Corrected typo in the p/n for the 2-high stack (IBM03254B4 -> IBM03254K4
Added PC133 part numbers for x16 devices.
Removed all references to Burst Stop Command.
Preliminary
Removed -10, -75D and -360 from the ordering information.
Removed stack package and stack references throughout the document.
Added PC100 2/2/2 support to the 75A and 75H devices.
Added a new AC timing parameter t
RFC
to define the Auto Refresh to Activate Bank/Auto Refresh command
period. Updated timing diagrams to reflect the change.
04/00
10/00
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