參數(shù)資料
型號(hào): IBMN325404CT3
廠商: IBM Microeletronics
英文描述: 256Mb(4Mbit x 16 I/O x 4 Bank) Synchronous DRAM(256M位(4M位 x 16 I/O x 4 組)同步動(dòng)態(tài)RAM)
中文描述: 256Mb的(的4Mb × 16的I / O × 4行)同步DRAM(256M位(4分位× 16的I / O × 4組)同步動(dòng)態(tài)RAM)的
文件頁數(shù): 35/66頁
文件大?。?/td> 1699K
代理商: IBMN325404CT3
IBMN325164CT3
IBMN325804CT3
IBMN325404CT3
Preliminary
256Mb Synchronous DRAM - Die Revision B
06K0608.F39375A
10/00
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 35 of 66
DC Electrical Characteristics
(T
A
= 0 to +70
°
C, V
DD
= 3.3V
±
0.3V)
Symbol
Parameter
Min.
Max.
Units
Notes
I
I(L)
Input Leakage Current, any input
(0.0V
V
IN
V
DD
), All Other Pins Not Under Test = 0V
Output Leakage Current
(D
OUT
is disabled, 0.0V
V
OUT
V
DDQ
)
Output Level (LVTTL)
Output “H” Level Voltage (
IOUT
= -2.0mA)
Output Level (LVTTL)
Output “L” Level Voltage (I
OUT
= +2.0mA)
-1
+1
μ
A
1
I
O(L)
-1
+1
μ
A
1
V
OH
2.4
V
V
OL
0.4
V
1. Multiply given planar values by 2 for 2-High stacked device.
DC Output Load Circuit
Output
1200
50pF
3.3 V
870
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
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