參數(shù)資料
型號: IBMN612404GT3B
廠商: IBM Microeletronics
英文描述: 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動態(tài)RAM(采用雙數(shù)據(jù)速率結(jié)構(gòu)))
中文描述: 128Mb的雙數(shù)據(jù)速率同步DRAM(128兆位高速的CMOS同步動態(tài)隨機存儲器(采用雙數(shù)據(jù)速率結(jié)構(gòu)))
文件頁數(shù): 64/79頁
文件大小: 1324K
代理商: IBMN612404GT3B
IBMN612404GT3B
IBMN612804GT3B
128Mb Double Data Rate Synchronous DRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 64 of 79
06K0566.F39350B
1/01
Data Input (Write)
(Timing Burst Length = 4)
Data Output (Read)
(Timing Burst Length = 4)
t
DH
t
DS
t
DH
t
DS
t
DQSL
DI n = Data In for column n.
3 subsequent elements of data in are applied in programmed order following DI n.
DI n
DQS
DQ
DM
Don’t Care
t
DQSH
t
DQSQ
(max) occurs when DQS is the earliest among DQS and DQ signals to transition.
DQS
DQ
t
DQSQ
t
DQSQ
t
QH1
Data Output hold time from Data Strobe is shown as t
QH
. t
is a function of the clock high or low time (t
HP
)
for that given clock cycle. Note correlation of t
HP
to t
QH
in the diagram above (t
HP1
to t
QH1
, etc.).
t
QH2
t
DQSQ
t
QH3
t
QH4
t
DQSQ
CK
CK
t
HP
t
HP
t
HP
t
HP1
t
HP2
t
HP3
t
HP4
t
is the half cycle pulse width for each half cycle clock. t
HP
is referenced to the clock duty cycle only
and not to the data strobe (DQS) duty cycle.
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