參數(shù)資料
型號(hào): IBMN612804GT3B
廠商: IBM Microeletronics
英文描述: 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動(dòng)態(tài)RAM(采用雙數(shù)據(jù)速率結(jié)構(gòu)))
中文描述: 128Mb的雙數(shù)據(jù)速率同步DRAM(128兆位高速的CMOS同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器(采用雙數(shù)據(jù)速率結(jié)構(gòu)))
文件頁數(shù): 27/79頁
文件大?。?/td> 1324K
代理商: IBMN612804GT3B
IBMN612404GT3B
IBMN612804GT3B
Preliminary
128Mb Double Data Rate Synchronous DRAM
06K0566.F39350B
1/01
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 27 of 79
Terminating a Read Burst: CAS Latencies (Burst Length = 8)
CAS Latency = 2
NOP
BST
NOP
NOP
NOP
Read
CK
Command
Address
DQS
DQ
DO a-n = data out from bank a, column n.
Cases shown are bursts of 8 terminated after 4 data elements.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal t
AC
, t
DQSCK
, and t
DQSQ
.
DOa-n
Don’t Care
CK
BAa, COL n
CL=2
CAS Latency = 2.5
NOP
BST
NOP
NOP
NOP
Read
CK
Command
Address
DQS
DQ
DOa-n
CK
BAa, COL n
CL=2.5
No further output data after this point.
DQS tristated.
No further output data after this point.
DQS tristated.
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