參數(shù)資料
型號(hào)： IBMN612804GT3B
廠商： IBM Microeletronics
英文描述： 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動(dòng)態(tài)RAM（采用雙數(shù)據(jù)速率結(jié)構(gòu)）)
中文描述： 128Mb的雙數(shù)據(jù)速率同步DRAM（128兆位高速的CMOS同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器（采用雙數(shù)據(jù)速率結(jié)構(gòu)））
文件頁數(shù)： 51/79頁
文件大?。?/td> 1324K
代理商： IBMN612804GT3B
IBMN612404GT3B
IBMN612804GT3B
Preliminary
128Mb Double Data Rate Synchronous DRAM
06K0566.F39350B
1/01
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 51 of 79
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
IN
, V
OUT
Voltage on I/O pins relative to V
SS
0.5 to V
DDQ
+
0.5
0.5 to
+
3.6
0.5 to
+
3.6
0.5 to
+
3.6
0 to
+
70
55 to
+
150
V
V
IN
Voltage on Inputs relative to V
SS
V
V
DD
Voltage on V
DD
supply relative to V
SS
V
V
DDQ
Voltage on V
DDQ
supply relative to V
SS
V
°
C
°
C
T
A
Operating Temperature (Ambient)
T
STG
Storage Temperature (Plastic)
P
D
Power Dissipation
1.0
W
I
OUT
Short Circuit Output Current
50
mA
Note:
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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