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| 型號(hào)： | IBMN612804GT3B |
| 廠商： | IBM Microeletronics |
| 英文描述： | 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動(dòng)態(tài)RAM（采用雙數(shù)據(jù)速率結(jié)構(gòu)）) |
| 中文描述： | 128Mb的雙數(shù)據(jù)速率同步DRAM（128兆位高速的CMOS同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器（采用雙數(shù)據(jù)速率結(jié)構(gòu)）） |
| 文件頁數(shù)： | 53/79頁 |
| 文件大?。?/td> | 1324K |
| 代理商： | IBMN612804GT3B |
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IBMN612404GT3B
IBMN612804GT3B
Preliminary
128Mb Double Data Rate Synchronous DRAM
06K0566.F39350B
1/01
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 53 of 79
Normal Strength Driver Pulldown and Pullup Characteristics
1. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve.
2. It is recommended that the “typical” IBIS pulldown V-I curve lie within the shaded region of the V-I curve.
3. The full variation in driver pullup current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines of the V-I curve.
4. It is recommended that the “typical” IBIS pullup V-I curve lie within the shaded region of the V-I curve.
I
OHW
Output Current: Weak Strength Driver
High current (V
OUT
= V
DDQ
-0.763V, min V
REF
, min V
TT
)
Low current (V
OUT
= 0.763V, max V
REF
, max V
TT
)
9.0
mA
1
I
OLW
9.0
Normal Strength Driver Pulldown Characteristics
DC Electrical Characteristics and Operating Conditions
(0C
≤
T
A
≤
70
°
C; V
DDQ
= 2.5V
±
0.2V, V
DD
=
+
2.5V
±
0.2V, see AC Characteristics)
Symbol
Parameter
Min
Max
Units
Notes
1. Inputs are not recognized as valid until V
REF
stabilizes.
2. V
REF
is expected to be equal to 0.5 V
DDQ
of the transmitting device, and to track variations in the DC level of the same. Peak-to-
peak noise on V
REF
may not exceed 2% of the DC value.
3. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
,
and must track variations in the DC level of V
REF
.
4. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK
.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-
ture and voltage range, for device drain to source voltages for 0.25 volts to 1.0 volts. For a given output, it represents the maximum
difference between pullup and pulldown drivers due to process variation.
0
2.7
0
140
I
O
V
OUT
(V)
Maximum
Typical High
Typical Low
Minimum
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