參數(shù)資料
型號(hào): IBMN612804GT3B
廠商: IBM Microeletronics
英文描述: 128Mb Double Data Rate Synchronous DRAM(128M位高速CMOS同步動(dòng)態(tài)RAM(采用雙數(shù)據(jù)速率結(jié)構(gòu)))
中文描述: 128Mb的雙數(shù)據(jù)速率同步DRAM(128兆位高速的CMOS同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器(采用雙數(shù)據(jù)速率結(jié)構(gòu)))
文件頁數(shù): 56/79頁
文件大小: 1324K
代理商: IBMN612804GT3B
IBMN612404GT3B
IBMN612804GT3B
128Mb Double Data Rate Synchronous DRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 56 of 79
06K0566.F39350B
1/01
DQS/DQ/DM Slew Rate
Parameter
Symbol
DDR266A
DDR266B
DDR200
Units
Notes
Min
Max
Min
Max
Min
Max
1, 2
DQS/DQ/DM
input slew rate
DC
SLEW
TBD
TBD
TBD
TBD
0.5
4.0
V/ns
1. Measured between V
IH
(DC), V
IL
(DC), and V
IL
(DC), V
IH
(DC).
2. DQS, DQ, and DM input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal tran-
sition through the DC region must be monotonic.
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