參數(shù)資料
型號: IBMN625404GT3B
廠商: IBM Microeletronics
英文描述: 256Mb Double Data Rate Synchronous DRAM(256M位雙數(shù)據速率同步動態(tài)RAM)
中文描述: 256MB雙數(shù)據速率同步DRAM(256M位雙數(shù)據速率同步動態(tài)RAM)的
文件頁數(shù): 23/79頁
文件大?。?/td> 1328K
代理商: IBMN625404GT3B
IBMN625404GT3B
IBMN625804GT3B
Preliminary
256Mb Double Data Rate Synchronous DRAM
29L0011.E36997B
1/01
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 23 of 79
Consecutive Read Bursts: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
NOP
Read
NOP
NOP
NOP
Read
CK
CK
Command
Address
DQS
DQ
CL=2
BAa, COL n
BAa, COL b
Don’t Care
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).
When burst length = 4, the bursts are concatenated.
When burst length = 8, the second burst interrupts the first.
3 subsequent elements of data out appear in the programmed order following DO a-n.
3 (or 7) subsequent elements of data out appear in the programmed order following DO a-b.
Shown with nominal t
AC
, t
DQSCK
, and t
DQSQ
.
CAS Latency = 2.5
NOP
Read
NOP
NOP
NOP
Read
CK
CK
Command
Address
DQS
DQ
CL=2.5
BAa, COL n
BAa,COL b
DOa-n
DOa- n
DOa- b
DOa-b
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