參數(shù)資料
型號: IBMN625404GT3B
廠商: IBM Microeletronics
英文描述: 256Mb Double Data Rate Synchronous DRAM(256M位雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)
中文描述: 256MB雙數(shù)據(jù)速率同步DRAM(256M位雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)的
文件頁數(shù): 24/79頁
文件大小: 1328K
代理商: IBMN625404GT3B
IBMN625404GT3B
IBMN625804GT3B
256Mb Double Data Rate Synchronous DRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 24 of 79
29L0011.E36997B
1/01
Non-Consecutive Read Bursts: CAS Latencies (Burst Length = 4)
CAS Latency = 2
NOP
NOP
Read
NOP
NOP
Read
CK
CK
Command
Address
DQS
DQ
DO a-n
DOa- b
DO a-n (or a-b) = data out from bank a, column n (or bank a, column b).
3 subsequent elements of data out appear in the programmed order following DO a-n (and following DO a-b).
Shown with nominal t
AC
, t
DQSCK
, and t
DQSQ
.
Don’t Care
BAa, COL n
BAa, COL b
CL=2
CAS Latency = 2.5
NOP
NOP
Read
NOP
NOP
Read
DO a-n
DOa- b
BAa, COL n
BAa, COL b
CL=2.5
CK
CK
Command
Address
DQS
DQ
NOP
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