參數(shù)資料
型號(hào): IBMN625404GT3B
廠商: IBM Microeletronics
英文描述: 256Mb Double Data Rate Synchronous DRAM(256M位雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)
中文描述: 256MB雙數(shù)據(jù)速率同步DRAM(256M位雙數(shù)據(jù)速率同步動(dòng)態(tài)RAM)的
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代理商: IBMN625404GT3B
IBMN625404GT3B
IBMN625804GT3B
256Mb Double Data Rate Synchronous DRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 34 of 79
29L0011.E36997B
1/01
Write to Write: Max DQSS, Non-Consecutive (Burst Length = 4)
T1
T2
T3
T4
T5
t
DQSS
(max)
NOP
NOP
Write
NOP
Write
DI a-b, etc. = data in for bank a, column b, etc.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
3 subsequent elements of data in are applied in the programmed order following DI a-n.
A non-interrupted burst is shown.
Each Write command may be to any bank.
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b
BAa, COL n
DI a-b
DI a-n
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