參數(shù)資料
型號: IBMN625404GT3B
廠商: IBM Microeletronics
英文描述: 256Mb Double Data Rate Synchronous DRAM(256M位雙數(shù)據(jù)速率同步動態(tài)RAM)
中文描述: 256MB雙數(shù)據(jù)速率同步DRAM(256M位雙數(shù)據(jù)速率同步動態(tài)RAM)的
文件頁數(shù): 42/79頁
文件大小: 1328K
代理商: IBMN625404GT3B
IBMN625404GT3B
IBMN625804GT3B
256Mb Double Data Rate Synchronous DRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 42 of 79
29L0011.E36997B
1/01
Write to Precharge: Minimum DQSS, Odd Number of Data (1 bit Write), Interrupting
(Burst Length = 4 or 8)
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 1 data element is written.
t
WR
is referenced from the first positive CK edge after the last desired data in pair.
The Precharge command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
1 = Can be don't care for programmed burst length of 4.
2 = For programmed burst length of 4, DQS becomes don't care at this point.
3 = This bit is correctly written into the memory array if DM is low.
4 = These bits are incorrectly written into the memory array if DM is low.
Don’t Care
T1
T2
T3
T4
T5
T6
NOP
NOP
NOP
PRE
Write
NOP
CK
CK
Command
Address
BA a, COL b
BA (a or all)
t
WR
t
RP
DI a-b
DQS
DQ
t
DQSS
(min)
2
1
1
DM
3
4
4
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