參數(shù)資料
型號: IBMN625804GT3B
廠商: IBM Microeletronics
英文描述: 256Mb Double Data Rate Synchronous DRAM(256M位雙數(shù)據(jù)速率同步動態(tài)RAM)
中文描述: 256MB雙數(shù)據(jù)速率同步DRAM(256M位雙數(shù)據(jù)速率同步動態(tài)RAM)的
文件頁數(shù): 28/79頁
文件大?。?/td> 1328K
代理商: IBMN625804GT3B
IBMN625404GT3B
IBMN625804GT3B
256Mb Double Data Rate Synchronous DRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 28 of 79
29L0011.E36997B
1/01
Read to Write: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
BST
NOP
Write
NOP
NOP
Read
DI a-b
CK
CK
Command
Address
DQS
DQ
DM
DOa-n
DO a-n = data out from bank a, column n
.DI a-b = data in to bank a, column b
1 subsequent elements of data out appear in the programmed order following DO a-n.
Data In elements are applied following Dl a-b in the programmed order, according to burst length.
Shown with nominal t
AC
, t
DQSCK
, and t
DQSQ
.
Don’t Care
BAa, COL n
BAa, COL b
CL=2
t
DQSS
(min)
CAS Latency = 2.5
BST
NOP
NOP
Write
NOP
Read
CK
CK
Command
Address
DQS
DQ
DM
DOa-n
BAa, COL n
BAa, COL b
CL=2.5
t
DQSS
(min)
Dla-b
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