參數(shù)資料
型號: IBMN625804GT3B
廠商: IBM Microeletronics
英文描述: 256Mb Double Data Rate Synchronous DRAM(256M位雙數(shù)據(jù)速率同步動態(tài)RAM)
中文描述: 256MB雙數(shù)據(jù)速率同步DRAM(256M位雙數(shù)據(jù)速率同步動態(tài)RAM)的
文件頁數(shù): 29/79頁
文件大?。?/td> 1328K
代理商: IBMN625804GT3B
IBMN625404GT3B
IBMN625804GT3B
Preliminary
256Mb Double Data Rate Synchronous DRAM
29L0011.E36997B
1/01
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 29 of 79
Read to Precharge: CAS Latencies (Burst Length = 4 or 8)
CAS Latency = 2
NOP
PRE
NOP
NOP
ACT
Read
CK
CK
Command
Address
DQS
DQ
DOa-n
DO a-n = data out from bank a, column n.
Cases shown are either uninterrupted bursts of 4 or interrupted bursts of 8.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal t
AC
, t
DQSCK
, and t
DQSQ
.
Don’t Care
BA a, COL n
BA a or all
BA a, ROW
CL=2.5
CAS Latency = 2.5
NOP
PRE
NOP
NOP
ACT
Read
CK
CK
Command
Address
DQS
DQ
DOa-n
t
RP
BA a, COL n
BA a or all
BA a, ROW
CL=2
t
RP
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