參數(shù)資料
型號: IBMN625804GT3B
廠商: IBM Microeletronics
英文描述: 256Mb Double Data Rate Synchronous DRAM(256M位雙數(shù)據(jù)速率同步動態(tài)RAM)
中文描述: 256MB雙數(shù)據(jù)速率同步DRAM(256M位雙數(shù)據(jù)速率同步動態(tài)RAM)的
文件頁數(shù): 44/79頁
文件大?。?/td> 1328K
代理商: IBMN625804GT3B
IBMN625404GT3B
IBMN625804GT3B
256Mb Double Data Rate Synchronous DRAM
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 44 of 79
29L0011.E36997B
1/01
Precharge
The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks.
The bank(s) is available for a subsequent row access some specified time (t
RP
) after the Precharge com-
mand is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where
only one bank is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged,
inputs BA0, BA1 are treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and
must be activated prior to any Read or Write commands being issued to that bank.
Precharge Command
BA
HIGH
BA = bank address
(if A10 is Low, otherwise Don’t Care).
CK
CK
CKE
CS
RAS
CAS
WE
A10
BA0, BA1
Don’t Care
All Banks
One Bank
A0-A9, A11, A12
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ICM7321 SINGLE 12/10/8-BIT VOLTAGE-OUTPUT DACS
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