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參數(shù)資料
| 型號： | QM50TX-HB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 240 x 128 pixel format, LED or EL Backlight |
| 中文描述： | 中功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 89K |
| 代理商： | QM50TX-HB |
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10
10
0.5
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM50TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
–3
10
–2
10
–1
10
0
10
1
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
0
10
1
10
2
10
3
10
–1
10
100
90
60
50
40
20
00
160
20
40
60
80 100 120 140
80
10
70
30
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
10
–1
2 3 4 5 7
0
10
2 3 4 5 7
1
10
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=100mA
I
C
=50A
t
f
t
s
160
40
00
100
800
120
80
300 400 500
140
100
60
20
T
j
=125°C
I
B2
=–1.5A
I
B2
=–3.5A
200
600 700
2
10
10
7
5
4
3
2
0.2
10
7
5
4
3
2
0.6
1.0
1.4
1.8
2.2
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
7
5
3
2
0.4
0.3
0.1
0
2 3 57
0.2
3
2
5 7
7
5
3
2
7
5
3
2
7
5
3
2
T
=25°C
NON-REPETITIVE
1m
DC
10ms
500μs
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
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|---|---|
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|---|---|
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