參數(shù)資料
型號(hào)： AP75T10GP-HF
廠(chǎng)商： ADVANCED POWER ELECTRONICS CORP
元件分類(lèi)： JFETs
英文描述： 65 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
文件頁(yè)數(shù)： 3/5頁(yè)
文件大小： 160K
代理商： AP75T10GP-HF
AP75T10GP-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
50
100
150
200
250
02468
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
6.0 V
5.0V
4.5V
V G =3.0V
0
20
40
60
80
100
120
0123456789
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
10V
6.0V
5.0V
4.5V
V G =3.0V
T C = 150
o C
11
12
13
14
15
16
17
24
68
10
V GS Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =16A
T C =25
o C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =30A
V G =10V
0
15
30
45
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0
0.5
1
1.5
2
-50
0
50
100
150
T j ,Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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