參數(shù)資料
型號: IC42S16160-7TG
英文描述: 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
中文描述: 4米× 16 × 4銀行(256兆)內(nèi)存
文件頁數(shù): 22/69頁
文件大?。?/td> 1219K
代理商: IC42S16160-7TG
IC42S16160
22
Integrated Circuit Solution Inc.
DR037-0A 9/05/2003
Write with Auto Precharge
During a write cycle, the auto precharge starts at the timing that is equal to the value of t
DPL
(min.) after the last data word
input to the device.
In summary, the auto precharge cycle begins relative to a reference clock that indicates the last data word is valid. In the
table below, minus means clocks before the reference; plus means clocks after the reference.
CAS
latency
2
3
Read
-1
-2
Write
+ t
DPL
((min.)
+ t
DPL
((min.)
WRITE with AUTO PRECHRGE
Burst lengh = 4
CLK
Command
CAS latency = 2
DQ
Command
CAS latency = 3
DQ
Remark WRITA means WRITE with AUTO Precharge
Hi - Z
DB0
DB3
DB2
DB1
WRITA B
WRITA B
T0
T1
T
2
T3
T4
T5
T6
T7
Hi - Z_
T8
t
DPL
t
DPL
DB0
DB3
DB2
DB1
AUTO PRECHARGE starts
AUTO PRECHARGE starts
相關(guān)PDF資料
PDF描述
IC42S16160-7TIG 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC43R16160 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S16160-7TIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160B-7TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM
IC42S16400 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400-6BG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM
IC42S16400-6BIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 16Bit x 4 Banks (64-MBIT) SDRAM