參數(shù)資料
型號(hào)： IC42S16160
英文描述： 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
中文描述： 4米× 16 × 4銀行（256兆）內(nèi)存
文件頁數(shù)： 27/69頁
文件大小： 1219K
代理商： IC42S16160
IC42S16160
Integrated Circuit Solution Inc.
DR037-0A 9/05/2003
27
PRECHARGE TERMINATION
PRECHARGE TERMINATION in READ Cycle
During READ cycle, the burst read operation is terminated by a precharge command.
When the precharge command is issued, the burst read operation is terminated and precharge starts.
The same bank can be activated again after t
RP
from the precharge command.
When
CAS
latency is 2, the read data will remain valid until one clock after the precharge command.
When
CAS
latency is 3, the read data will remain valid until two clocks after the precharge command.
Precharge Termination in READ Cycle
Burst lengh= X
CLK
Command
CAS latency=2
DQ
Hi-Z
Read
T0
T1
T2
T3
T4
T5
T6
T7
T8
PRE
ACT
DQ
Read
PRE
ACT
t
RP
CAS latency=3
Q0
Q3
Q2
Q1
Hi-Z
Q0
Q3
Q2
Q1
command
t
RP
相關(guān)PDF資料
PDF描述
IC42S16160-6TG 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-6TIG 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-7TG 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-7TIG 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC43R16160 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S16160-6TG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-6TIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-7TG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-7TIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160B-7TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM
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