參數(shù)資料
型號(hào): IC42S16160
英文描述: 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
中文描述: 4米× 16 × 4銀行(256兆)內(nèi)存
文件頁(yè)數(shù): 9/69頁(yè)
文件大?。?/td> 1219K
代理商: IC42S16160
IC42S16160
Integrated Circuit Solution Inc.
DR037-0A 9/05/2003
9
AC ELECTRICAL CHARACTERISTICS
(At T
A
= 0 ~ 70°C, V
DD
= V
DDQ
= 3.3 ± 0.3V, V
SS
= V
SSQ
= 0V , unless otherwise note
d
)
-6
-7
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
t
CK
3
t
CK
2
t
AC
3
t
AC
2
t
CH
t
CL
t
CKE
t
CKH
t
AS
t
AH
t
CMS
t
CMH
t
DS
t
DH
t
OH
t
LZ
t
HZ
t
RC
t
RAS
t
RCD
t
RP
t
RRD
t
DPL
t
T
t
RSC
t
PDE
t
SRX
t
REF
t
DQZ
t
DQW
t
WR
CLK Cycle Time
CAS
Latency = 3
CAS
Latency = 2
CAS
Latency = 3
CAS
Latency = 2
6
5.4
5.4
6
7
10
2.5
2.5
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
3
1
3
60
45
15
15
14
15
0.3
14
0
1
2
0
5.4
6
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
CLK
CLK
CLK
7.5
2.5
2.5
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
3
1
3
60
42
12
15
12
12
0.3
12
0
1
2
0
CLK to valid output delay
(1)
CLK high pulse width
CLK low pulse width
CKE setup time
CKE hold time
Address setup time
Address hold time
Command setup time
Command hold time
Data input setup time
Data input hold time
Output data hold time
(1)
CLK to output in low - Z
CLK to output in H - Z
ROW cycle time
ROW active time
RAS
to
CAS
delay
Row precharge time
Row active to active delay
Data in to precharge
Transition time
Mode reg. set cycle
Power down exit setup time
Self refresh exit time
Refresh Time
DQM data out disable latency
DQM write latency
Write recovery time
100,000
1.2
6
64
2
100,000
1.2
7
64
2
Notes:
1.
if clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter.
相關(guān)PDF資料
PDF描述
IC42S16160-6TG 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-6TIG 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-7TG 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-7TIG 4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC43R16160 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S16160-6TG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-6TIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-7TG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160-7TIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM
IC42S16160B-7TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM