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參數(shù)資料
| 型號(hào)： | IC43R16160-5T |
| 英文描述： | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| 中文描述： | 4米× 16位× 4個(gè)銀行（256兆）DDR SDRAM內(nèi)存 |
| 文件頁(yè)數(shù)： | 33/56頁(yè) |
| 文件大小： | 1271K |
| 代理商： | IC43R16160-5T |
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AC CHARACTERISTICS
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
DQS falling edge from CK rising -
hold time
t
DSH
0.2
0.2
0.2
0.75
t
CK
t
CH
t
CL
t
CH
t
CL
t
CH
t
CL
Data-out high-impedance window
from CK/
CK
t
HZ
-0.65
0.65
-0.7
0.7
-0.75
0.75
ns
18
Data-out low-impedance window
from CK/
CK
t
LZ
-0.65
0.65
-0.7
0.7
-0.75
0.75
ns
18
Address and control input hold
time (fast slew rate)
t
IH
F
0.6
0.75
0.9
ns
14
Address and control input setup
time (fast slew rate)
t
IS
F
0.6
0.75
0.9
ns
14
Address and control input hold
time (slow slew rate)
t
IH
s
0.7
0.8
1
ns
14
Address and control input setup
time (slow slew rate)
t
IS
s
0.7
0.8
1
ns
14
LOAD MODE REGISTER
command cycle time
t
MRD
2.00
2.00
2.00
t
CK
DQ-DQS hold, DQS to first DQ to
non-valid,per access
t
HP
-
t
QHS
t
HP
-
t
QHS
t
HP
-
t
QHS
Data hold skew factor
t
QHS
0.5
0.6
0.75
ns
ACTIVE to PRECHARGE com-
mand
t
RAS
40
70,000
42
120,000
45
120,000
ns
35
ACTIVE to READ with Auto pre-
charge command
t
RAP
ns
43
ACTIVE to ACTIVE/AUTO RE-
FRESH command period
t
RC
60
60
65
ns
AUTO REFRESH command period
t
RFC
70
72
75
ns
46
ACTIVE to READ or WRITE delay
t
RCD
15
18
15
ns
PRECHARGE command period
t
RP
15
18
15
ns
DQS read preamble
t
RPRE
0.9
1.1
0.9
1.1
0.9
1.1
t
CK
DQS read postamble
t
RPST
0.4
0.6
0.4
0.6
0.4
0.6
t
CK
ACTIVE bank a to ACTIVE bank b
command
t
RRD
10
12
15
ns
DQS write preamble
t
WPRE
0.25
0.25
0.25
t
CK
DQS write preamble setup time
t
WPRES
0
0
0
ns
20,21
-7
25,26
Half clock period
t
HP
-5
-6
t
RAS(MIN) - (burst length *
t
CK/2)
34
ns
t
QH
ns
IC4
3R16160
Integrated Circuit Solution Inc.
DDR001-0B
1
1
/
10
/
2004
33
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC43R16160-5TG | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-6T | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-6TG | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7T | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7TG | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC43R16160-5TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-6T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-6TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
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