參數(shù)資料
型號(hào): IC43R16160-5TG
英文描述: 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
中文描述: 4米× 16位× 4個(gè)銀行(256兆)DDR SDRAM內(nèi)存
文件頁數(shù): 19/56頁
文件大?。?/td> 1271K
代理商: IC43R16160-5TG
Precharge Timing During Write Operation
Precharge timing for Write operations in DRAMs requires enough time to satisfy the write recovery require-
ment. This is the time required by a DRAM sense amp to fully store the voltage level. For DDR SDRAMs, a
timing parameter (t
WR
) is used to indicate the required amount of time between the last valid write operation
and a Precharge command to the same bank.
The “write recovery” operation begins on the rising clock edge after the last DQS edge that is used to strobe
in the last valid write data. “Write recovery” is complete on the next 2nd rising clock edge that is used to strobe
in the Precharge command.
Write with Precharge Timing
(
CAS Latency = Any; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
D
0
D
1
D
2
D
3
NOP
Write
NOP
NOP
NOP
NOP
Pre
A
NOP
CK,
CK
Command
DQS
DQ
t
RAS
(min)
t
RP
(min)
BA
NOP
T9
T10
t
WR
D
0
D
1
D
2
D
3
DQS
DQ
t
WR
BA
IC4
3R16160
Integrated Circuit Solution Inc.
DDR001-0B
1
1
/
10
/
2004
19
相關(guān)PDF資料
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IC43R16160-6T 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160-6TG 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC43R16160-6T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160-6TG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160-7T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160-7TG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
IC43R16160E-5TL 制造商:Integrated Silicon Solution Inc 功能描述:256M, 2.5V, DDR, 16MX16, 200MHZ, 66 PIN