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參數(shù)資料
| 型號： | IC43R16160-5TG |
| 英文描述： | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| 中文描述： | 4米× 16位× 4個(gè)銀行（256兆）DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 30/56頁 |
| 文件大?。?/td> | 1271K |
| 代理商： | IC43R16160-5TG |
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DC Operating Conditions & Specifications
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)
Notes:
1. V
is expected to be equal to 0.5*V
of the transmitting device, and to track variations in the DC level of the same. Peak-
to-peak noise on V
may not exceed 2% of the DC value
2.V
TT
is not applied directly to the device. V
is a system supply for signal termination resistors, is expected to be set equal to
V
REF
, and must track variations in the DC level of V
3. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
Table 11. DC operating condition
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage (for device with a nominal V
DD
of 2.5V)
V
DD
2.3
2.7
Supply voltage (V
DD
of 2.6V for DDR400 device)
V
DD
2.5
2.7
I/O Supply voltage
V
DDQ
2.3
2.7
V
I/O Supply voltage for DDR400 device
V
DDQ
2.5
2.7
V
I/O Reference voltage
V
REF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
V
TT
V
REF
-0.04
V
REF
+0.04
V
2
Input logic high voltage
V
IH
(DC)
V
REF
+0.15
V
DDQ
+0.3
V
Input logic low voltage
V
IL
(DC)
-0.3
V
REF
-0.15
V
Input Voltage Level, CK and CK inputs
V
IN
(DC)
-0.3
V
DDQ
+0.3
V
Input Differential Voltage, CK and CK inputs
V
ID
(DC)
0.3
V
DDQ
+0.6
V
3
Input leakage current
I
I
-2
2
uA
Output leakage current
I
OZ
-5
5
uA
Output High Current (V
OUT
= 1.95V)
I
OH
-16.8
mA
Output Low Current (V
OUT
= 0.35V)
I
OL
16.8
mA
IC4
3R16160
30
Integrated Circuit Solution Inc.
DDR001
-
0B
1
1
/
10
/
2004
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| IC43R16160-6T | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-6TG | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7T | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC43R16160-6T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-6TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160E-5TL | 制造商:Integrated Silicon Solution Inc 功能描述:256M, 2.5V, DDR, 16MX16, 200MHZ, 66 PIN |
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