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| 型號(hào)： | IC43R16160-5TG |
| 英文描述： | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| 中文描述： | 4米× 16位× 4個(gè)銀行（256兆）DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 40/56頁 |
| 文件大小： | 1271K |
| 代理商： | IC43R16160-5TG |
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IBIS: I/V Characteristics for Input and Output Buffers
Normal strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages from
0 to VDDQ/2
Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Pulldown Current (mA)
Pullup Current (mA)
Voltage (V)
Typical Low
Typical High
Minimum
Maximum
Typical Low
Typical High
Minimum
Maximum
0.1
6.0
6.8
4.6
9.6
-6.1
-7.6
-4.6
-10.0
Minimum
Typical Low
Typical High
Maximum
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
I
Vout(V)
Maximum
Typical High
Minumum
I
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0
0.5
1.0
1.5
2.0
2.5
Typical Low
V
DDQ
—
Vout(V)
IC4
3R16160
40
Integrated Circuit Solution Inc.
DDR001
-
0B
1
1
/
10
/
2004
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC43R16160-6T | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-6TG | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7T | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7TG | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| ICS570 | Multiplier and Zero Delay Buffer |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC43R16160-6T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-6TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160E-5TL | 制造商:Integrated Silicon Solution Inc 功能描述:256M, 2.5V, DDR, 16MX16, 200MHZ, 66 PIN |
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