參數(shù)資料
型號: IC43R16160-6T
英文描述: 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
中文描述: 4米× 16位× 4個銀行(256兆)DDR SDRAM內(nèi)存
文件頁數(shù): 42/56頁
文件大?。?/td> 1271K
代理商: IC43R16160-6T
The above characteristics are specified under best, worst and normal process variation/conditions
Half strength driver
1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.
3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figure b.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2
6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2
Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
I
20
Minimum
Typical Low
Typical High
Maximum
0
10
30
40
50
60
70
80
90
0.0
1.0
2.0
I
Vout(V)
Maximum
Typical High
Minumum
Typical Low
I
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DDQ
Vout(V)
IC4
3R16160
4
2
Integrated Circuit Solution Inc.
DDR001
-
0B
1
1
/
10
/
2004
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