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| 型號： | IC43R16160-6TG |
| 英文描述： | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| 中文描述： | 4米× 16位× 4個銀行（256兆）DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 27/56頁 |
| 文件大?。?/td> | 1271K |
| 代理商： | IC43R16160-6TG |
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TRUTH TABLE 3 – Current State Bank n - Command to Bank m
(Notes: 1-6; notes appear below and on next page)
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSR has been met
(if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted, i.e., the current state is for bank
n
and the
commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and
t
RP has been met.
Row Active: A row in the bank has been activated, and
t
RCD has been met. No data
bursts/accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with AUTO PRECHARGE disabled, and
has not yet terminated or been terminated.
Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled, and
has not yet terminated or been terminated.
CURRENT STATE
/CS
/RAS /CAS
/WE
COMMAND/ACTION
NOTES
Any
H
X
X
X
DESELECT (NOP/continue previous operation)
L
H
H
H
NO OPERATION (NOP/continue previous operation)
Idle
X
X
X
X
Any Command Otherwise Allowed to Bank m
Row Activating,
Active, or Precharging
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
7
L
H
L
L
WRITE (select column and start WRITE burst)
7
L
L
H
L
PRECHARGE
Read
(Auto-Precharge
Disabled)
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start new READ burst)
7
L
L
H
L
PRECHARGE
Write
(Auto- Precharge
Disabled)
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
7, 8
L
H
L
L
WRITE (select column and start new WRITE burst)
7
L
L
H
L
PRECHARGE
Read
(With Auto-Precharge)
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start new READ burst)
3a, 7
L
H
L
L
WRITE (select column and start WRITE burst)
3a, 7, 9
L
L
H
L
PRECHARGE
Write
(With Auto-Precharge)
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
3a, 7
L
H
L
L
WRITE (select column and start new WRITE burst)
3a, 7
L
L
H
L
PRECHARGE
IC4
3R16160
Integrated Circuit Solution Inc.
DDR001-0B
1
1
/
10
/
2004
27
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IC43R16160-7T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160-7TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| IC43R16160E-5TL | 制造商:Integrated Silicon Solution Inc 功能描述:256M, 2.5V, DDR, 16MX16, 200MHZ, 66 PIN |
| IC43R32400 | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM |
| IC43R32400-4B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM |
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