參數(shù)資料
型號: IC43R16160-7T
英文描述: 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
中文描述: 4米× 16位× 4個銀行(256兆)DDR SDRAM內(nèi)存
文件頁數(shù): 54/56頁
文件大?。?/td> 1271K
代理商: IC43R16160-7T
Figure 47 - BANK WRITE ACCESS
CK
/CK
COMMAND
NOP
NOP
NOP
WRITE
ACT
CKE
RA
A10
BA0, BA1
Bank
x
Bank
x
DON'T CARE
DI
n
= Data In for column
n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order following DI
n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address
NOP commands are shown for ease of illustration; other valid commands may be possible at these times
NOP
NOP
NOP
NOP
PRE
DIS AP
ONE BANK
ALL BANKS
tCK
tCH
tCL
tIS
tIS
tIH
tIS
tIS
tIH
tIH
tRCD
tRAS
tIH
tIS
tIH
RA
xx4:A0-A9
x16:x8:x4:A11
Col
n
*Bank
x
RA
tWR
DQ
DM
DQS
DI
n
t
tDQSS
t
t
Case 1:
tDQSS = min
Case 2:
tDQSS = max
DQ
DM
DQS
DI
n
t
tDQSS
t
t
t
t
WPST
DQSH
DQSL
tWPRES
WPST
DQSH
DQSL
WPRE
WPRES
tWPRE
tDSS
tDSS
tDSH
tDSH
IC4
3R16160
54
Integrated Circuit Solution Inc.
DDR001
-
0B
1
1
/
10
/
2004
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