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參數(shù)資料
| 型號： | IC43R16160-7TG |
| 英文描述： | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
| 中文描述： | 4米× 16位× 4個銀行（256兆）DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 12/56頁 |
| 文件大小： | 1271K |
| 代理商： | IC43R16160-7TG |
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Auto Precharge Operation
The Auto Precharge operation can be issued by having column address A
10
high when a Read or Write
command is issued. If A
10
is low when a Read or Write command is issued, then normal Read or Write burst
operation is executed and the bank remains active at the completion of the burst sequence. When the Auto
Precharge command is activated, the active bank automatically begins to precharge at the earliest possible
moment during the Read or Write cycle once t
RAS
(min) is satisfied.
Read with Auto Precharge
If a Read with Auto Precharge command is initiated, the DDR SDRAM will enter the precharge operation
N-clock cycles measured from the last data of the burst read cycle where N is equal to the CAS latency pro-
grammed into the device. Once the autoprecharge operation has begun, the bank cannot be reactivated until
the minimum precharge time (t
RP
) has been satisfied.
Read with Autoprecharge Timing
(CAS Latency = 2; Burst Length = 4)
T0
T1
T2
T3
T4
T5
T6
T7
T8
D
0
D
1
D
2
D
3
Begin Autoprecharge
BA
ACT
R w/AP
NOP
NOP
NOP
NOP
NOP
NOP
CK, CK
Command
DQS
DQ
t
RAS
(min)
t
P
(min)
Earliest Bank A reactivate
T9
IC4
3R16160
12
Integrated Circuit Solution Inc.
DDR001
-
0B
1
1
/
10
/
2004
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC43R16160E-5TL | 制造商:Integrated Silicon Solution Inc 功能描述:256M, 2.5V, DDR, 16MX16, 200MHZ, 66 PIN |
| IC43R32400 | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM |
| IC43R32400-4B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM |
| IC43R32400-4BG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM |
| IC43R32400-5B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM |
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