參數(shù)資料
型號: ICM7562MG
廠商: IC MICROSYSTEMS SDN BHD
元件分類: DAC
英文描述: 12/10/8-Bit Low Power Dual DACs With Serial Interface and Voltage Output
中文描述: DUAL, SERIAL INPUT LOADING, 8 us SETTLING TIME, 12-BIT DAC, PDSO8
封裝: ROHS COMPLIANT, MSOP-8
文件頁數(shù): 3/10頁
文件大小: 198K
代理商: ICM7562MG
ICM7562/7542/7522
ABSOLUTE MAXIMUM RATINGS
Rev. A6 ICmic reserves the right to change specifications without prior notice
3
Symbol
Parameter
Value
Unit
V
DD
I
IN
V
IN_
V
IN_REF
T
STG
T
SOL
Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
ORDERING INFORMATION
Supply Voltage
Input Current
-0.3 to 7.0
+/- 25.0
-0.3 to 7.0
-0.3 to 7.0
-65 to +150
300
V
mA
V
V
Digital Input Voltage (SCK, SDI , CLR , CS )
Reference Input Voltage
Storage Temperature
Soldering Temperature
o
C
o
C
Part
Operating Temperature Range
Package
ICM7562
-40
o
C to 85
o
C
08-Lead MSOP
ICM7542
-40
o
C to 85
o
C
08-Lead MSOP
ICM7522
-40
o
C to 85
o
C
08-Lead MSOP
DC ELECTRICAL CHARACTERISTICS
(V
DD
=
2.7V to 5.5V, V
OUT
unloaded; all specifications T
MIN
to
T
MAX
unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DC PERFORMANCE
ICM7562
N
Resolution
12
Bits
DNL
Differential Nonlinearity
(Notes 1 & 3)
0.4
+1.0
LSB
INL
Integral Nonlinearity
(Notes 1 & 3)
4.0
+12.0
LSB
ICM7542
N
Resolution
10
Bits
DNL
Differential Nonlinearity
(Notes 1 & 3)
0.1
+1.0
LSB
INL
Integral Nonlinearity
(Notes 1 & 3)
1.0
+3.0
LSB
ICM7522
N
Resolution
8
Bits
DNL
Differential Nonlinearity
(Notes 1 & 3)
0.05
+1.0
LSB
INL
Integral Nonlinearity
(Notes 1 & 3)
0.25
+0.75
LSB
STATIC ACCURACY
GE
Gain Error
+0.5
% of FS
OE
Offset Error
+25
mV
POWER REQUIREMENTS
V
DD
Supply Voltage
2.7
5
5.5
V
I
DD
Supply Current
Full Scale at VDD=5..5
125
200
μA
Full Scale at VDD=3.6
100
190
μA
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