參數(shù)資料
型號： IHW30N100T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
中文描述： 低損耗DuoPack：IGBT的在TrenchStop和場終止技術(shù)與反并聯(lián)二極管
文件頁數(shù)： 7/12頁
文件大小： 360K
代理商： IHW30N100T
Soft Switching Series
IHW30N100T
q
Power Semiconductors
7
Rev. 2.4 May 06
E
,
S
0A
10A
20A
30A
40A
50A
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
E
off
E
,
S
20
30
40
0.0mJ
1.0mJ
2.0mJ
3.0mJ
E
off
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 600V, V
GE
= 0/15V,
R
G
=26.9
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 600V, V
GE
= 0/15V,
I
C
= 30A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
E
off
E
,
S
400V
500V
600V
700V
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 600V,
V
GE
= 0/15V,
I
C
= 30A,
R
G
= 26.9
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 30A,
R
G
= 26.9
,
Dynamic test circuit in Figure E)
相關(guān)PDF資料
PDF描述
IHW30N120R2 Reverse Conducting IGBT with monolithic body diode
IHW30N90R Reverse Conducting IGBT with monolithic body diode
IHW40N60T Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
IHW40T120 IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IIRLR3105 AUTOMOTIVE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW30N100T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW30N100TFKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1000V 60A 412W TO247-3
IHW30N110R3 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW30N110R3FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.1KV 60A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1100V 30A 330W TO247-3
IHW30N120R 功能描述:IGBT 晶體管 REVERSE CONDUCT IGBT 1200V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*