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    參數(shù)資料
    型號: IHW40N60T
    廠商: INFINEON TECHNOLOGIES AG
    英文描述: Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
    中文描述: 低損耗DuoPack:在TrenchStop IGBT的與反技術(shù)并聯(lián)二極管
    文件頁數(shù): 3/12頁
    文件大?。?/td> 384K
    代理商: IHW40N60T
    Switching Characteristic, Inductive Load,
    at
    T
    j
    =25
    °
    C
    Soft Switching Series
    IHW40N60T
    q
    Power Semiconductors
    3
    Rev. 2.2 Apr. 06
    Value
    Typ.
    Parameter
    Symbol
    Conditions
    min.
    max.
    Unit
    IGBT Characteristic
    Turn-on delay time
    Rise time
    Turn-off delay time
    Fall time
    Turn-on energy
    Turn-off energy
    Total switching energy
    Switching Characteristic, Inductive Load,
    at
    T
    j
    =175
    °
    C
    t
    d(on)
    t
    r
    t
    d(off)
    t
    f
    E
    on
    E
    off
    E
    ts
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    186
    66.3
    -
    0.92
    0.92
    ns
    T
    j
    =25
    °
    C,
    V
    CC
    =400V,
    I
    C
    =40A,
    V
    GE
    =0/15V,
    R
    G
    =5.6
    ,
    L
    σ
    C
    σ
    Energy losses include
    “tail” and diode
    reverse recovery.
    1)
    =40nH,
    1)
    =30pF
    mJ
    Value
    Typ.
    Parameter
    Symbol
    Conditions
    min.
    max.
    Unit
    IGBT Characteristic
    Turn-on delay time
    Rise time
    Turn-off delay time
    Fall time
    Turn-on energy
    Turn-off energy
    Total switching energy
    t
    d(on)
    t
    r
    t
    d(off)
    t
    f
    E
    on
    E
    off
    E
    ts
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    196
    76.5
    -
    1.4
    1.4
    ns
    T
    j
    =175
    °
    C,
    V
    CC
    =400V,
    I
    C
    =40A,
    V
    GE
    =0/15V,
    R
    G
    = 5.6
    L
    σ
    C
    σ
    Energy losses include
    “tail” and diode
    reverse recovery.
    1)
    =40nH,
    1)
    =30pF
    mJ
    1)
    Leakage inductance
    L
    σ
    and Stray capacity
    C
    σ
    due to dynamic test circuit in Figure E.
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    IHW40N60T_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
    IHW40T120 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 40A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
    IHW40T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
    IHW40T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 75A 270W TO247-3
    IHW40T60 功能描述:IGBT 晶體管 IGBT TrnchStp w/Soft Fast Recovery RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube