參數(shù)資料
型號(hào)： IHW40T120
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 3/14頁
文件大小： 354K
代理商： IHW40T120
^
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
IHW40T120
Soft Switching Series
Power Semiconductors
3
Rev. 2 Mar-04
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
2500
130
110
203
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=40A
V
GE
=15V
TO-247AC
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
-
13
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
10
μ
s
V
CC
= 600V,
T
j
= 25
°
C
-
210
-
A
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
48
34
480
70
3.3
3.2
6.5
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=600V,
I
C
=40A,
V
GE
=0/15V,
R
G
=15
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=39pF
mJ
t
rr
Q
rr
I
rrm
-
-
-
195
1880
20.2
-
-
-
ns
nC
A
T
j
=25
°
C,
V
R
=800V,
I
F
=18A,
di
F
/dt
=800A/
μ
s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
相關(guān)PDF資料
PDF描述
IIRLR3105 AUTOMOTIVE MOSFET
IK-540A Toshiba IK-540A Camera
IKA10N60T IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKA15N60T Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IHW40T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Soft Switching Series
IHW40T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 75A 270W TO247-3
IHW40T60 功能描述:IGBT 晶體管 IGBT TrnchStp w/Soft Fast Recovery RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IHW40T60FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 80A 303W TO247-3
IHY15N120R3 功能描述:IGBT 晶體管 Reverse Conducting IGBT Monolithic Body RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*