參數(shù)資料
型號(hào): IHW40T120
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述: 在IGBT的溝槽場終止技術(shù)和軟,恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù): 6/14頁
文件大?。?/td> 354K
代理商: IHW40T120
^
IHW40T120
Soft Switching Series
Power Semiconductors
6
Rev. 2 Mar-04
I
C
,
C
0V
1V
2V
3V
4V
5V
6V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
15V
7V
9V
11V
13V
V
GE
=17V
I
C
,
C
0V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(
T
j
= 150°C)
1V
2V
3V
4V
5V
6V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
15V
7V
9V
11V
13V
V
GE
=17V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(
T
j
= 25°C)
I
C
,
C
0V
2V
4V
6V
8V
10V
12V
0A
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
25°C
T
J
=150°C
V
C
C
-
E
-50°C
0°C
50°C
100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
I
C
=40A
I
C
=80A
I
C
=25A
I
C
=10A
V
GE
,
GATE-EMITTER
VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(
V
GE
= 15V)
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