參數(shù)資料
型號： IKA10N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場終止技術和軟，恢復快反平行何快恢復二極管
文件頁數(shù)： 9/13頁
文件大?。?/td> 368K
代理商： IKA10N60T
TrenchStop Series
IKA10N60T
Power Semiconductors
9
Rev. 2 Oct-04
Z
t
,
T
10μs 100μs 1ms 10ms100ms 1s
10s
0
-2
K/W
0
-1
K/W
0
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
Z
t
,
T
10μs 100μs 1ms 10ms100ms 1s
10s
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(
D = t
p
/
T
)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
t
r
,
R
200A/μs
400A/μs
600A/μs
800A/μs
0ns
50ns
100ns
150ns
200ns
250ns
300ns
T
J
=25°C
T
J
=175°C
Q
r
,
R
200A/μs
400A/μs
600A/μs
800A/μs
0,0μC
0,1μC
0,2μC
0,3μC
0,4μC
0,5μC
0,6μC
0,7μC
0,8μC
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=400V,
I
F
=10A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 10A,
Dynamic test circuit in Figure E)
R
,(K/W )
1.596
1.985
0.5623
0.3324
0.3531
0.1730
R
1
τ
,
(s)
4.622
1.288
5.066*10
-2
4.152*10
-3
6.059*10
-4
7.863*10
-5
6
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
1.418
2.125
0.5890
0.5424
0.6311
0.5061
τ
,
(s)
5.068
1.416
6.455*10
-2
5.732*10
-3
1.019*10
-3
1.499*10
-4
6
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
相關PDF資料
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相關代理商/技術參數(shù)
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IKA15N65F5XKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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