參數(shù)資料
型號： IKB01N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 高速2技術(shù)與軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 5/14頁
文件大?。?/td> 384K
代理商： IKB01N120H2
IKB01N120H2
Power Semiconductors
5
Rev. 2.3 May 06
I
C
,
C
10Hz
100Hz
1kHz
10kHz
100kHz
0A
1A
2A
3A
4A
5A
T
C
=110°C
T
C
=80°C
I
C
,
C
1V
10V
100V
1000V
,01A
0,1A
1A
10A
200
μ
s
DC
50
μ
s
5
μ
s
2
μ
s
20
μ
s
t
p
=1
μ
s
f
,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(
T
j
≤
150
°
C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 241
)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
≤
150
°
C)
P
t
,
P
25°C
50°C
75°C
100°C
125°C
150°C
0W
5W
10W
15W
20W
25W
30W
I
C
,
C
25°C
50°C
75°C
100°C
125°C
150°C
0A
1A
2A
3A
4A
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(
T
j
≤
150
°
C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(
V
GE
≤
15V,
T
j
≤
150
°
C)
I
c
I
c
相關(guān)PDF資料
PDF描述
IKB10N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP10N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKB15N60T IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
IKP04N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKB01P-9/4 制造商:TE Connectivity 功能描述:LEGEND STRIP WHITE/YELLOW
IKB01PW 制造商:TE Connectivity 功能描述:IKC MARKER TYPE IKB 01
IKB02P-9/4 制造商:TE Connectivity 功能描述:LEGEND STRIP WHITE/YELLOW 制造商:TE Connectivity 功能描述:LEGEND STRIP, WHITE/YELLOW
IKB02PW 制造商:TE Connectivity 功能描述:IKC MARKER TYPE IKB 02, sheet of 240
IKB03N120H2 功能描述:IGBT 晶體管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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