參數(shù)資料
型號(hào): IKB10N60T
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述: 低損耗DuoPack:在IGBT的溝槽場(chǎng)終止技術(shù)和軟,恢復(fù)快反平行何快恢復(fù)二極管
文件頁(yè)數(shù): 13/14頁(yè)
文件大?。?/td> 396K
代理商: IKB10N60T
TrenchStop Series
IKP10N60T
IKB10N60T
Power Semiconductors
13
Rev. 2 Oct-04
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
r r m
90%
I
r r m
10%
I
r r m
di
/dt
r r
di /dt
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
Q =Q
Q
S
F
+
t =t
t
S
F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T (t)
τ
1
r
1
τ
2
r
2
n
n
τ
r
T
C
r
r
r
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance
L
σ
=60nH
and Stray capacity
C
σ
=40pF.
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