參數(shù)資料
型號： IKB10N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 2/14頁
文件大?。?/td> 396K
代理商： IKB10N60T
Thermal Resistance
TrenchStop Series
IKP10N60T
IKB10N60T
Power Semiconductors
2
Rev. 2 Oct-04
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
TO-220-3-1
1.35
R
thJCD
TO-220-3-1
1.9
R
thJA
TO-220-3-1
TO-263-3-2 Footprint
TO-263-3-2 (6cm2 Cu)
62
65
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=0.2mA
V
GE
= 15V,
I
C
=10A
T
j
=25
°
C
T
j
=175
°
C
V
GE
=0V,
I
F
=10A
T
j
=25
°
C
T
j
=175
°
C
I
C
=0.3mA,
V
CE
=
V
GE
V
CE
=600V
,
V
GE
=0V
T
j
=25
°
C
T
j
=175
°
C
600
-
-
-
-
1.5
1.8
2.05
-
Diode forward voltage
V
F
-
-
1.6
1.6
2.0
-
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
4.1
-
-
-
-
4.6
-
-
-
6
none
5.7
40
1000
100
-
V
μA
Gate-emitter leakage current
Transconductance
Integrated gate resistor
I
GES
g
fs
R
Gint
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=10A
nA
S
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKB10N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 20A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 110W TO263-3
IKB15N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 15A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB15N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 30A 130W TO263-3
IKB20N60H3 功能描述:IGBT 晶體管 600v Hi-Speed SW IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB20N60H3ATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 170W TO263-3
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