參數(shù)資料
型號(hào)： IKB15N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 3/13頁
文件大?。?/td> 398K
代理商： IKB15N60T
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
TrenchStop Series
IKB15N60T
q
Power Semiconductors
3
Rev. 2.1 Dec-04
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
17
11
188
50
0.22
0.35
0.57
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0 /15V,
R
G
=15
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=154nH,
1)
=39pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
34
0.24
10.4
718
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=25
°
C,
V
R
=400V,
I
F
=15A,
di
F
/dt
=825A/
μ
s
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
17
15
212
79
0.34
0.47
0.81
-
-
-
-
-
-
-
ns
T
j
=175
°
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
= 15
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=154nH,
1)
=39pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
140
1.0
14.7
495
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=175
°
C
V
R
=400V,
I
F
=15A,
di
F
/dt
=825A/
μ
s
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKB15N60TATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 30A 130W TO263-3
IKB20N60H3 功能描述:IGBT 晶體管 600v Hi-Speed SW IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB20N60H3ATMA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 170W TO263-3
IKB20N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKB20N60TA 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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