參數(shù)資料
型號： IKB15N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 9/13頁
文件大?。?/td> 398K
代理商： IKB15N60T
TrenchStop Series
IKB15N60T
q
Power Semiconductors
9
Rev. 2.1 Dec-04
Z
t
,
T
1μs
10μs 100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
Z
t
,
T
1μs
10μs 100μs
1ms
10ms 100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(
D = t
p
/
T
)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
t
r
,
R
400A/μs
600A/μs
800A/μs
0ns
40ns
80ns
120ns
160ns
200ns
T
J
=25°C
T
J
=175°C
Q
r
,
R
400A/μs
600A/μs
800A/μs
0.0μC
0.2μC
0.4μC
0.6μC
0.8μC
1.0μC
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=400V,
I
F
=15A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 15A,
Dynamic test circuit in Figure E)
R
,(K/W )
0.06991
0.43036
0.53839
0.58718
0.23695
0.03700
R
1
τ
,
(s)
1.11*10
-1
2.552*10
-2
3.914*10
-3
4.92*10
-4
7.19*10
-5
7.4*10
-6
6
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.13265
0.37007
0.30032
0.34701
R
1
τ
,
(s)
5.67*10
-2
1.558*10
-2
2.147*10
-3
2.724*10
-4
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
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