- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384482 > IKP01N120H2 (INFINEON TECHNOLOGIES AG) HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode PDF資料下載
參數(shù)資料
| 型號： | IKP01N120H2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 高速2技術(shù)與軟，恢復(fù)快反平行何快恢復(fù)二極管 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 386K |
| 代理商： | IKP01N120H2 |
IKP01N120H2
Power Semiconductors
7
Rev. 2.3 May 06
t
,
S
0A
1A
2A
10ns
100ns
1000ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
50
100
150
200
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 241
,
dynamic test circuit in Fig.E)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 1A,
dynamic test circuit in Fig.E)
t
,
S
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 1A,
R
G
= 241
,
dynamic test circuit in Fig.E)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.03mA)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IKP04N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKP06N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKP15N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKW15T120 | LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE |
| IKW30N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IKP01N120H2XKSA1 | 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 3.2A 28W TO220-3 |
| IKP03N120H2 | 功能描述:IGBT 晶體管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKP03N120H2_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode |
| IKP03N120H2XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO220-3 |
| IKP04N60T | 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。