參數(shù)資料
型號(hào)： IKP04N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 1/13頁
文件大?。?/td> 370K
代理商： IKP04N60T
Low Loss DuoPack : IGBT in Trench and Fieldstop
technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5
μ
s
Designed for :
- Frequency Converters
- Drives
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
TrenchStop Series
IKP04N60T
q
Power Semiconductors
1
Rev. 2.2 Dec-04
T
j,max
Marking Code
Package
Ordering Code
IKP04N60T
600 V
4 A
1.5 V
175
°
C
K04T60
TO-220
Q67040S4714
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (
V
CE
≤
600V,
T
j
≤
175
°
C)
Diode forward current, limited by
T
jmax
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
600
8
4
V
A
I
Cpuls
-
12
12
I
F
4
8
I
Fpuls
V
GE
t
SC
12
±
20
5
V
μ
s
P
tot
T
j
T
stg
-
42
W
-40...+175
-55...+175
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-220-3-1
(TO-220AB)
相關(guān)PDF資料
PDF描述
IKP06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP15N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKW15T120 LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE
IKW30N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKP04N60T_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP04N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 8A 42W TO220-3
IKP06N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP06N60T_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP06N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO220-3
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