參數(shù)資料
型號(hào)： IKP04N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù)： 9/13頁
文件大小： 370K
代理商： IKP04N60T
TrenchStop Series
IKP04N60T
q
Power Semiconductors
9
Rev. 2.2 Dec-04
Z
t
,
T
1μs
10μs
100μs
1ms
10ms 100ms
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
Z
t
,
T
1μs
10μs 100μs
1ms
10ms 100ms
10
-1
K/W
10
0
K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D
=0.5
t
P
,
PULSE WIDTH
t
P
,
PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(
D = t
p
/
T
)
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(
D
=
t
P
/
T
)
t
r
,
R
400A/μs
600A/μs
0ns
40ns
80ns
120ns
160ns
200ns
240ns
280ns
T
J
=25°C
T
J
=175°C
Q
r
,
R
400A/μs
600A/μs
0.00μC
0.05μC
0.10μC
0.15μC
0.20μC
0.25μC
0.30μC
0.35μC
T
J
=25°C
T
J
=175°C
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(
V
R
=400V,
I
F
=4A,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(
V
R
= 400V,
I
F
= 4A,
Dynamic test circuit in Figure E)
R
,(K/W )
0.38216
0.68326
1.49884
0.93550
R
1
τ
,
(s)
5.16*10
-2
7.818*10
-3
9*10
1.134*10
-4
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.29183
0.79081
1.86970
2.04756
R
1
τ
,
(s)
7.018*10
-2
1.114*10
-2
1.236*10
-3
2.101*10
-4
6
C
1
=
τ
1
/
R
1
R
2
C
2
=
τ
2
/
R
2
相關(guān)PDF資料
PDF描述
IKP06N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKP15N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IKP04N60T_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP04N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 8A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 8A 42W TO220-3
IKP06N60T 功能描述:IGBT 晶體管 LOW LOSS DuoPack 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP06N60T_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP06N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO220-3
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