參數(shù)資料
型號： IKP06N60T
廠商： INFINEON TECHNOLOGIES AG
英文描述： Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 低損耗DuoPack：在IGBT的溝槽場終止技術和軟，恢復快反平行何快恢復二極管
文件頁數(shù)： 2/13頁
文件大?。?/td> 358K
代理商： IKP06N60T
IKP06N60T
Thermal Resistance
TrenchStop series
p
Power Semiconductors
2
Rev. 2.2 May 06
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
1.7
R
thJCD
2.6
R
thJA
62
K/W
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,
I
C
=0.25mA
V
GE
= 15V,
I
C
=6A
T
j
=25
°
C
T
j
=175
°
C
V
GE
=0V,
I
F
=6A
T
j
=25
°
C
T
j
=175
°
C
I
C
=0.18mA,
V
CE
=
V
GE
V
CE
=600V
,
V
GE
=0V
T
j
=25
°
C
T
j
=175
°
C
600
-
-
Collector-emitter saturation voltage
V
CE(sat)
-
-
1.5
1.8
2.05
Diode forward voltage
V
F
-
-
1.6
1.6
2.05
-
Gate-emitter threshold voltage
V
GE(th)
4.1
4.6
5.7
V
Zero gate voltage collector current
I
CES
-
-
-
-
-
-
-
40
700
100
-
μA
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
R
Gint
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=6A
nA
S
3.6
none
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
368
28
11
42
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=6A
V
GE
=15V
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
7
-
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
5
μ
s
V
CC
= 400V,
T
j
= 25
°
C
-
55
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
相關PDF資料
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IKP15N60T Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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相關代理商/技術參數(shù)
參數(shù)描述
IKP06N60T_07 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
IKP06N60TXKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 12A 88W TO220-3
IKP08N65F5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP08N65F5XKSA1 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKP08N65H5 功能描述:IGBT 晶體管 ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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