參數(shù)資料
型號: IKW15T120
廠商: INFINEON TECHNOLOGIES AG
英文描述: LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE
中文描述: 低損耗DUOPACK:在戰(zhàn)壕和場終止技術(shù)IGBT的軟,恢復(fù)快,抗何并行快恢復(fù)二極管
文件頁數(shù): 4/15頁
文件大?。?/td> 450K
代理商: IKW15T120
IKW15T120
^
TrenchStop Series
Power Semiconductors
4
Preliminary / Rev. 1 Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
50
35
600
120
2.0
2.1
4.1
-
-
-
-
-
-
-
ns
T
j
=150
°
C,
V
CC
=600V,
I
C
=15A,
V
GE
=-15/15V,
R
G
= 56
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=39pF
mJ
t
rr
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
330
3.4
21
190
-
-
-
-
ns
μC
A
A/
μ
s
T
j
=150
°
C
V
R
=600V,
I
F
=15A,
di
F
/dt
=600A/
μ
s
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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