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參數(shù)資料
| 型號(hào)： | IKW30N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 低損耗DuoPack：在IGBT的溝槽場(chǎng)終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管 |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大?。?/td> | 397K |
| 代理商： | IKW30N60T |
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Thermal Resistance
TrenchStop Series
IKW30N60T
q
Power Semiconductors
2
Rev. 2.1 Dev-04
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
TO-247
0.80
R
thJCD
TO-247
1.05
R
thJA
TO-247 AC
40
K/W
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=0.2mA
V
GE
= 15V,
I
C
=30A
T
j
=25
°
C
T
j
=175
°
C
V
GE
=0V,
I
F
=30A
T
j
=25
°
C
T
j
=175
°
C
I
C
=0.43mA,
V
CE
=
V
GE
V
CE
=600V
,
V
GE
=0V
T
j
=25
°
C
T
j
=175
°
C
600
-
-
-
-
1.5
1.9
2.05
-
Diode forward voltage
V
F
-
-
1.65
1.6
2.05
-
Gate-emitter threshold voltage
V
GE(th)
4.1
4.9
5.7
V
Zero gate voltage collector current
I
CES
-
-
-
-
-
-
-
40
1000
100
-
μA
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
R
Gint
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=30A
nA
S
16.7
-
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
1630
108
50
167
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=30A
V
GE
=15V
TO-247-3-1
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
7
-
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
5
μ
s
V
CC
= 400V,
T
j
= 150
°
C
-
275
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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| IKW30N60TA | 功能描述:IGBT 晶體管 IGBT TrnchStp w/Soft Fast recovery RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| IKW40N120H3 | 功能描述:IGBT 晶體管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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