參數(shù)資料
型號(hào): IKW30N60T
廠商: INFINEON TECHNOLOGIES AG
英文描述: Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述: 低損耗DuoPack:在IGBT的溝槽場(chǎng)終止技術(shù)和軟,恢復(fù)快反平行何快恢復(fù)二極管
文件頁數(shù): 6/13頁
文件大?。?/td> 397K
代理商: IKW30N60T
TrenchStop Series
IKW30N60T
q
Power Semiconductors
6
Rev. 2.1 Dev-04
t
S
0A
10A
20A
30A
1ns
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
S
10
20
30
40
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
J
=175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 10
,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 30A,
Dynamic test circuit in Figure E)
t
S
25°C
50°C
75°C
100°C 125°C 150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
)
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
T
J
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 30A,
R
G
=10
,
Dynamic test circuit in Figure E)
T
J
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(
I
C
= 0.43mA)
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