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參數(shù)資料
| 型號： | IKW75N60T |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode |
| 中文描述： | 低損耗DuoPack：在IGBT的溝槽場終止技術(shù)和軟，恢復(fù)快反平行何快恢復(fù)二極管 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 409K |
| 代理商： | IKW75N60T |
TrenchStop Series
IKW75N60T
q
Power Semiconductors
7
Rev. 2.4 May 06
E
,
S
0A
20A
40A
60A
80A
100A 120A 140A
0.0mJ
4.0mJ
8.0mJ
12.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
0
5
10
15
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
I
C
,
COLLECTOR CURRENT
R
G
,
GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
R
G
= 5
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
= 175°C,
V
CE
= 400V, V
GE
= 0/15V,
I
C
= 75A,
Dynamic test circuit in Figure E)
E
,
S
25°C
50°C
75°C
100°C
125°C
150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
E
ts
*
E
off
*)
E
and
E
include losses
due to diode recovery
E
on
*
E
,
S
300V
350V
400V
450V
500V
550V
0mJ
2mJ
4mJ
6mJ
8mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/15V,
I
C
= 75A,
R
G
= 5
,
Dynamic test circuit in Figure E)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
= 175°C,
V
GE
= 0/15V,
I
C
= 75A,
R
G
= 5
,
Dynamic test circuit in Figure E)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IKW75N60T_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology |
| IKW75N60TA | 功能描述:IGBT 晶體管 600V 75A 100nA RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IKW75N60TAFKSA1 | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 80A 428W TO247-3 |
| IKW75N60TFKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 600V 80A 428W TO247-3 |
| IKW75N60TXK | 制造商:Infineon Technologies AG 功能描述: |
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