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參數(shù)資料
| 型號： | ILA03N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LightMOS Power Transistor |
| 中文描述： | LightMOS功率晶體管 |
| 文件頁數(shù)： | 4/15頁 |
| 文件大小： | 330K |
| 代理商： | ILA03N60 |
ILA03N60, ILP03N60
ILB03N60, ILD03N60
^
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Power Semiconductors
4
Rev. 1.2 Apr-04
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Turn-off energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
off
-
-
-
-
-
-
-
20
45
120
120
15
28
12
-
-
-
-
-
-
-
ns
3
V
CC
=400V,
I
C
=0.8A,
V
GE
=0/10V,
R
G
=60
,
C
Snubber
=0nF
(
C
Snubber
: Snubber
capacitor)
C
Snubber
=1nF
μJ
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Reverse diode Characteristic (switching in half bridge configuration with same transistor according
to figure C)
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
Peak reverse recovery current
I
rrm
Peak rate of fall of reverse recovery
current
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
Peak reverse recovery current
I
rrm
Peak rate of fall of reverse recovery
current
-
-
-
-
90
0.27
5.5
300
-
-
-
-
ns
μC
A
A/μs
di
rr
/dt
V
R
=400V,
I
F
=0.8A,
V
GE
=0/10V,
R
G
=80
-
-
-
-
250
0.75
8
300
-
-
-
-
ns
μC
A
A/μs
di
rr
/dt
V
R
=400V,
I
F
=3A,
V
GE
=0/10V,
R
G
=80
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