參數(shù)資料
型號: ILA03N60
廠商: INFINEON TECHNOLOGIES AG
英文描述: LightMOS Power Transistor
中文描述: LightMOS功率晶體管
文件頁數(shù): 7/15頁
文件大?。?/td> 330K
代理商: ILA03N60
ILA03N60, ILP03N60
ILB03N60, ILD03N60
^
Power Semiconductors
7
Rev. 1.2 Apr-04
t
,
S
0.5A
1.0A
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+10V,
R
G
= 80
,
Dynamic test circuit in Figure E)
1.5A
2.0A
2.5A
3.0A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
20
40
60
80
100
120
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+10V,
I
C
= 1A,
Dynamic test circuit in Figure E)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
2.0V
2.2V
2.4V
2.6V
2.8V
3.0V
3.2V
3.4V
E
,
S
0,5A
1,0A
1,5A
2,0A
2,5A
3,0A
0μJ
10μJ
20μJ
30μJ
40μJ
50μJ
60μJ
70μJ
80μJ
E
off, C
Snubber
=1nF
E
on
*
E
off
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 30μA)
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+10V,
R
G
= 80
,
C
Snubber
=0/1nF
Dynamic test circuit in Figure E)
*)
E
on
includes losses
due to diode recovery.
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