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參數(shù)資料
| 型號： | ILB03N60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LightMOS Power Transistor |
| 中文描述： | LightMOS功率晶體管 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 330K |
| 代理商： | ILB03N60 |
ILA03N60, ILP03N60
ILB03N60, ILD03N60
^
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Power Semiconductors
3
Rev. 1.2 Apr-04
continued
Value
typ.
1
-
Parameter
Symbol
Conditions
min.
-
-
max.
20
250
Unit
Zero gate voltage collector current
I
CES
V
CE
=600V
,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=3.0A
μ
A
Gate-emitter leakage current
Transconductance
Capacities, Gate Charge,
at
T
j
=25
°
C
I
GES
g
fs
-
-
-
100
-
nA
S
1.5
Value
typ.
110
6
4
3.7
Parameter
Symbol
Conditions
min.
-
-
-
max.
-
-
-
Unit
Input capacitance
C
iss
C
oss
C
rss
C
o(er)
Output capacitance
Reverse transfer capacitance
Effective Output Capacitance
(Energy related)
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
GE
=0V,
V
CE
=0V to 480V
V
CE
=400V,
I
C
=3.0A,
V
GE
=10V
pF
Gate to emitter charge
Gate to collector charge
Gate total charge
Gate plateau voltage
Gate to emitter charge
Gate to collector charge
Gate total charge
Gate plateau voltage
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Q
GE
Q
GC
Q
G
V
m
Q
GE
Q
GC
Q
G
V
m
-
-
-
-
-
-
-
-
1
5.5
8.5
6.5
0.5
4.0
8
3.5
-
-
-
-
-
-
-
-
nC
V
nC
V
CE
=400V,
I
C
=0.8A,
V
GE
=10V
V
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Turn-off energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
off
-
-
-
-
-
-
-
15
35
100
100
12
20
8
-
-
-
-
-
-
-
ns
3
V
CC
=400V,
I
C
=0.8A,
V
GE
=0/10V,
R
G
=60
,
C
Snubber
=0nF
(
C
Snubber
: Snubber
capacitor)
C
Snubber
=1nF
μJ
3
E
on
includes SDP04S60 diode commutation losses
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